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2-Dimensional

Negative Capacitance

Nanoscale Vacuum

Field Effect Transistor

Student: Nathaniel Hernandez

Advisor: Dr. Marc Cahay

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Abstract

Our team has created a semi-analytical model to simulate a new type of transistor (2D NC-VFET) merging 3 types of technologies: 2D Monolayer Semiconductor Channels; Negative Capacitance that offers reduced sub-threshold swings below the thermionic limit; and Nanoscale Vacuum Gaps that offer greater electron velocity, extreme operating temperatures, and radiation robustness.

Abstract
Poster

Poster

Video Presentation

Video Presentation

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